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| CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION |
| Liu Yuling; Wang Guizhen; Xu Xiaohui; Li Xiangdu; Zhang Zhihua |
| Electronic Department, Hebei Industrial College, Tianjin 300130 |
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Abstract This paper analyzes the mechanism models of metallic impurity infection and adsorption-desorption, and the distribution law of microdefect in growing of silicon CVD epitaxy, and then a new epitaxy technology is proposed, which is optimized by using contrary compensation, and by which the metallic impurity and microdefect in silicon epitaxy layer are reduced effectively.
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Received: 12 September 1994
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1996, Vol. 18 
