|
|
|
| THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING |
| Ji Zhijiang①; Zhang Weilian②; Wang Zhijun② |
| ①Hebei Institute of Architecture Engineering,Zhangjiakou 075024;②Hebei Institute of Technology, Tianjin 300130 |
|
|
|
|
Abstract The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied. It is found that Ge not only can promote the out-diffusion of oxygen and form wider DFZ in Ge-Doped CZSi wafer than that in the control sample, but also can suppress the formation of precipitation.
|
|
Received: 16 July 1994
|
|
|
|
|
|
|
|
|
1996, Vol. 18 
