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| RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY |
| Liu Yuling; Jin Jie; Xu Xiaohui; Zhang Dechen |
| Hebei Polytechnical University Tianjin 300130 |
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Abstract This paper, first, analyzes self-doping mechanism, then develops an optimization technology by using the contrary compensation principle, adsorption-desorption mechanism and transform of viscous flow layer between static and dymanic conditons. It results in controlling efffectively self-doping under normal condition.
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Received: 13 May 1994
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1996, Vol. 18 
