|
|
|
| FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR |
| Zhao Cezhou; Liu Enke; Li Guozheng; Gao Yong; Liu Xiding |
| Electronic Engineering Department,Xi'an Jiaotong University, Xi'an 710049 |
|
|
|
|
Abstract A new method for analysing SOI (Silicon on Insulator) Sructure Mach-Zehnder interferometric modulator by using finite element method is put forward. On the basis of the theory of the single-mode SOI rib optical waveguides with large cross-section, the electro-optic modulating mechanism of the modulator is investigated by using the plasma dispersion effect, and the electrical characteristics of the device is analysed by using the finie element method at p+n junction large injected. So the method provides a basis of the theory for the device to be fabricated.
|
|
Received: 09 March 1995
|
|
|
|
|
|
|
|
|
1997, Vol. 19 
