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| NUMERICAL SIMULATION OF LOW-TEMPERATURE BIPOLAR TRANSISTOR |
| Zhang Zhubing; Wu Jin; Wei Tongli |
| Microelectronic Center Southeast University Nanjing 210096 |
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Abstract Numerical models for the physical parameters and physical effects about numerical simulation of low-temperature bipolar transistor are discussed. The numerical approaches required for simulation of low-temperature behavior are presented. A simulation program has been given to investigate bipolar transistor behavior range of 77-300K. Finally, the characteristics of a typical bipolar transistor are simulated at 300K and 77K.
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Received: 17 January 1997
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1998, Vol. 20 
