|
|
|
| 3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS |
| Xu Shanjia; Sheng Xinqing; Jia Dongyan |
| Dept. of Electron. Eng. and Infm. Sci., University of Science and Technology of China Hefei 230027 |
|
|
|
|
Abstract The scattering characteristics of Ⅱ- Ⅵ semiconductor materials with tensor conductivity resulting of the Hall-effect,filled in waveguide with gaps are analyzed with 3-D edge-element.Some useful curves are given and the procedure of determining mobility and carrier concentration of Ⅱ-Ⅵ semiconductor materials with these curves is described.Since this method starts from the functional variation directly,it avoids the difficulty,met in the other methods,of solving the eigenvalue problem for very thin lossy isotropic dielectric loaded waveguide.The experimental results confirm the effectiveness,reliability and accuracy of the approach.
|
|
Received: 11 July 1997
|
|
|
|
|
|
|
|
|
1999, Vol. 21 
