用光电灵敏度法研究a-Si:H中的电荷放大效应

Abstract
Figure/Table
References
Related Citation (5)

Download: PDF (1106 KB)
Export: BibTeX | EndNote (RIS)

Abstract The photocurrent-voltage characteristics and photoelectric sensitivity of a-Si:H samples with slit and comb electrodes are measured. A method for calculating the charge intensifying gain from the photoelectric sensitivity is proposed. The obtained charge intensifying gain of a-Si:H under an electric field of 10⁵ V/cm with this method is as high as 4.3×10³. The generation process of the charge intensification effect in a-Si:H is discussed on the basis of the energy level diagram. And the product of electron ...

Key words： a-Si:H Semiconductor Charge intensification effect Photoelectric sensitivity method

Received: 29 April 1997

PACS:

TN304.8

	Service

	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors




	Hai Yuhan
	Hai Hao
	Xi Zhonghe
	Zhang Qiang

Cite this article:

Hai Yuhan,Hai Hao,Xi Zhonghe等. INVESTIGATION OF CHARGE INTENSIFICATION EFFECT IN a-Si:H BY MEANS OF PHOTOELECTRIC SENSITIVITY METHOD[J]. , 1999, 21(5): 686-691 .

URL:

http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y1999/V21/I5/686