THE RESEARCH OF ELECTRON TRANSFER IN MIM LIGHT EMISSION TUNNEL DIODE
Shu Jianhua①; Sun Chengxiu①; Wang Qiming②
①Department of Electronic Engineering Southeast University Nanjing 210096;②National Integrated Optoelectronics Key Lab., Institute of Semiconductors Chinese Academy of Sciences Beijing 100083
Abstract This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-V characteristic curve. By building the trapezoid potential barrier model and calculating the numerical solution of I-V characteristic curve with computer, it is found that the increment of potential barrier average width is agree with the experiment well. This increment of potential barrier average width is caused by the SPP s impeding and trapping effect upon tunneling electrons.