THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS
Wang Maoxiang①; Wu Zonghan②; Sun Chengxiu①; Zhang Jigao③
①Department of Electronic Engineering Southeast University Nanjing 210096;②Department of Physics Nanjing 210096;③Beijing University of Post and Telecommunication Beijing 100876
Abstract The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed. In connection with the electronic resonant tunneling and light emission mechanism of the junction, the negative resistance phenomenon (NRP) in the I-V curve and the relation between NRP and Surface Plasmon Polariton(SPP) have been studied especially.
Wang Maoxiang,Wu Zonghan,Sun Chengxiu等. THE NEGATIVE RESISTANCE PHENOMENON IN THE I-V CURVE WITH DOUBLE BARRIER LIGHT EMISSION TUNNEL JUNCTIONS[J]. , 2000, 22(3): 492-495 .