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| INFLUENCE OF NITROGEN FLOW RATE ON FIELD ELECTRON EMISSON ON AMORPHOUS-CARBON |
| Wang Xiaoping①; Li Yunjun①; Yao Ning①; Ma Huizhong②; Bi Zhaoqi①; Zhang Binglin① |
| ①Dept. of Phys., Henan Fundam. and Appl. Sci. Res. Inst.,Zhengzhou Univ.,Zhengzhou 450052;②Dept. of Math and Phys.,Zhengzhou Industrial Univ., Zhengzhou 450002 China |
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Abstract Using microwave plasma-assisted chemical vapor deposition system, the nitrogen dopeed amorphaus-carbon films are obtained on the deposited molybdenum films, which are deposited on ceramic (Al2O3). The scanning electron microscopy (SEM), optical microscopy, X-ray diffraction (XRD) and Raman spectrum are used to analyze the obtained. Experimental results show that, when increasing the nitrogen, the eaission current density increases and the turn-on field decreases.
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Received: 01 April 1999
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Corresponding Authors:
Zhang Binglin
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2001, Vol. 23 
