硅纳米线的固-液-固热生长及升温特性研究

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Abstract Large-scale amorphous Si nanowires are prepared by heating the Si substrate at 950-1000°C under the ambient of Ar/H₂ (2.5×10⁴Pa) using Ni (or Au) catalyst. The nanowires have a length up to several tens micron and a diameter of 10-40 nm. A solid-liquid-solid (SLS) mechanism is found controlling the nanowire growth. The heating process during SLS growth is studied detailedly using SEM and TEM. Effects of several processing variables such as the pressure, temperature and heating time are investigated individually. The effect of three heating steps is also discussed.

Key words： Si nanowires SLS mechanism Heating process

Received: 14 August 2001

PACS:

TN304.1

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	Articles by authors







	Xing Yingjie
	Xi Zhonghe
	Yu Dapeng
	Hang Qingling
	Yan Hanfei
	Feng Sunqi
	Xue Zengquan

Cite this article:

Xing Yingjie,Xi Zhonghe,Yu Dapeng等. Heating process of solid-liquid-solid (SLS) growth of silicon nanowires[J]. , 2003, 25(2): 259-262 .

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http://jeit.ie.ac.cn/EN/ OR http://jeit.ie.ac.cn/EN/Y2003/V25/I2/259