A New Charge Pump with High Voltage Gain for Low Supply Environment
Yang Sheng-guang; He Shu-zhuan; Gao Ming-lun; Li Wei; Zhou Song-ming
Institute of VLSI Design, Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China
Abstract：Charge pump plays an important role in low supply voltage integrated circuits. Three important issues of on-chip charge pump circuits are voltage gain, output voltage ripple and area efficiency. A new charge pump is proposed in this paper which introduces a subsidiary charge pump and two voltage level shifters. The new structure can generate different magnitude clocks to drive the gates of switch transistors, which will improve voltage gain of charge pump greatly by means of effective control of conduction of them. At the other hand, we can avoid the threshold voltage loss by taking PMOS transistors as switch transistors. Simulation results show: The new charge pumps have higher voltage gain, shorter start up time and small voltage ripple compared with those proposed in earlier papers, especially in low supply voltage environment.
杨盛光; 何书专; 高明伦; 李伟; 周松明. 一种低电压、高增益电荷泵[J]. 电子与信息学报, 2007, 29(8): 2001-2005 .
Yang Sheng-guang; He Shu-zhuan; Gao Ming-lun; Li Wei; Zhou Song-ming. A New Charge Pump with High Voltage Gain for Low Supply Environment. , 2007, 29(8): 2001-2005 .
2007, Vol. 29 
