A New 5GHz Adaptively-Biased and Variable Gain Low Noise Amplifier
Xu Hua①; Yao Yuan①; Shi Yin①; Fa Foster Dai②
①Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;②Departarent of Elecrrical and Computer Eugineering , Auburm Universitg ,Auburm AL36849, USA
Abstract：In this paper, a new Low Noise Amplifier (LNA) with adaptive-biasing and variable gain is presented, in which charge pump is used to convert the RF output signal of LNA into a dc control signal, the amplitude of which should be proportional to the input RF magnitude. By using this signal to control bias and gain of LNA simultaneously, the linearity of LNA is greatly improved. In 5GHz frequency, bipolar transistors exhibit better frequency and noise performance, so in this paper, BiCMOS technology is used. The LNA exhibits a noise figure of no more than 3.0dB (in the high gain mode), about 13dBm IIP3 improvement and gain tuning range of more than 15dB.
徐 化; 姚 远; 石 寅; Fa Foster Dai. 一种新型的5GHz自适应偏置及可变增益低噪声放大器[J]. 电子与信息学报, 2006, 28(8): 1521-1525 .
Xu Hua①; Yao Yuan①; Shi Yin①; Fa Foster Dai②. A New 5GHz Adaptively-Biased and Variable Gain Low Noise Amplifier. , 2006, 28(8): 1521-1525 .
2006, Vol. 28 
