Abstract：A new absolute error function is presented in this paper. The function is applied to extract parameters of the nonlinear model, which can avoid the calculation error and reduce the inaccurate parameter extraction significantly. Nitride semiconductor devices are widely used, especially the AlGaN/GaN HEMT devices. The AlGaN/GaN HEMT model and parameters is very important to radio frequency, power electronic devices and circuit design. The new absolute error function is applied to extract the parameters of AlGaN/GaN HEMT nonlinear devices model. Through comparing three kinds of error function, the results show that the proposed error function is more accurate and effective. At the same time, a precise and effective method is provided to extract the parameters of electronic devices in the future.
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