Design of High-density Mask ROM Based on Diode Cells
YE Yong① KANG Yong② SONG Zhitang① CHEN Bangming②
①(Shanghai Institute of Microsystem And Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ②(Shanghai Xinchu Integrated Circuit Incorporation, Shanghai 200122, China)
Since the traditional Read-Only Memory (ROM) has the problems of low density and high power consumption, a mask ROM based on diode cells and contact-programming process is proposed. With dual-trench isolation process and borderless contact scheme, the diode array can realize ultrahigh density. Based on the proposed novel diode array, a mask ROM macro with 2 Mb capacity is designed, which contains 8 256 kb sub-arrays. The diode arrays are fabricated with 40 nm design rule and the peripheral logic circuits are achieved in 2.5 V CMOS process. The effective area of the diode cell is only 0.017 μm2 and the density of the diode array is 0.0268 mm2/Mb. Test results show that the cell feature of diodes is good and the bit yield of the 2 Mb ROM achieves 99.8% under 2.5 V supply voltage.
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YE Yong, KANG Yong, SONG Zhitang, CHEN Bangming. Design of High-density Mask ROM Based on Diode Cells. JEIT, 2017, 39(6): 1452-1457.
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