A CMOS Wideband Variable Gain LNA with Novel Gain Control Method
Chen Fei-hua①② Duo Xin-zhong③ Sun Xiao-wei①
①(Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ②(Graduate University of Chinese Academy of Sciences, Beijing 100039, China) ③(Semiconductor Manufacturing International Corporation (SMIC), Shanghai 201203, China)
Abstract：Multi-standard convergence for high speed ultra-wideband wireless communication leads the evolution for future RF devices. In this paper a CMOS wideband low noise amplifier (LNA) with novel gain control method is presented. In the first stage shunt-resistor feedback is used for wideband input matching, while for low noise performance noise cancelling circuit is adopted. A novel 6-bit digital programmable gain control circuit is exploited and adopted in the second stage for variable gain. Fabricated with SMIC 0.13μm RF CMOS process, die area is 0.76mm2. Measured results show that the LNA operates in 1.1-1.8 GHz frequency band, and the maximum and minimum gain are 21.8 dB and 8.2 dB, 7 gain modes in all. Minimum noise figure is 2.7 dB. Typical IIP3 is -7 dBm.
谌斐华, 多新中, 孙晓玮. 一种具有新型增益控制技术的CMOS宽带可变增益LNA[J]. 电子与信息学报, 2010, 32(11): 2772-2775.
Chen Fei-Hua, Duo Xin-Zhong, Sun Xiao-Wei. A CMOS Wideband Variable Gain LNA with Novel Gain Control Method. , 2010, 32(11): 2772-2775.
2010, Vol. 32 
