Abstract：An experiment for preparation of SOI films by using scanning electron beam to modify polycrystalline silicon on SiO2 is presented. This method takes on the lateral epitaxial growth of liquid phase crystallon to form monocrystal Si films. The effects of beam power density, scanning velocity, temperature of substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the mono-crystalline silicon zone is nearly 200×25μm2.
林世昌; 张燕生; 张国炳; 王阳元. 扫描电子束在绝缘衬底上生长单晶硅薄膜(SOI)的实验研究[J]. 电子与信息学报, 1995, 17(3): 298-303 .
Lin Shichang①; Zhang Yansheng①; Zhang Guobing②; Wang Yangyuan②. THE GROWTH OF MONOCRYSTALLINE SILICON THIN FILM ON INSULATOR (SOI) BY SCANNING ELECTRON BEAM. , 1995, 17(3): 298-303 .
1995, Vol. 17 
