Abstract：The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied. It is found that Ge not only can promote the out-diffusion of oxygen and form wider DFZ in Ge-Doped CZSi wafer than that in the control sample, but also can suppress the formation of precipitation.
冀志江; 张维连; 王志军. 掺锗直拉硅片三步退火本征吸除清洁区形成的研究[J]. 电子与信息学报, 1996, 18(2): 217-220 .
Ji Zhijiang①; Zhang Weilian②; Wang Zhijun②. THE STUDY OF THE FORMATION OF DENUDED ZONE IN CZSi BY INTERNAL GETTERING THREE-STEP ANNEALING. , 1996, 18(2): 217-220 .
1996, Vol. 18 
