Abstract:Based on the quasi-2D analytic model for short-channel NMOSFET s in the temperature range of 77-295K, the substrate current (/SUB) related physical mechanism for 77-295K NMOSFET was investigated. It was discovered that the channel electron mean-free path was temperature independent with a value of about 7.6 nm. Although electrons could acquire larger energy at the drain end of the channel at lower temperatures, the /SUB did not increase as significantly as reported by Henning, et al.(1987), owing to the reduced impact ionization process. Agreement
between calculations and experiments demonstrated the feasibility of the proposed mechanism in 77-295K.