摘要 本文提出了采用有限元法分析SOI(Silicon on Insulator)结构M-Z(Mach-Zehnder)干涉型调制器的新方法。该方法在大截面单模SOI脊形波导理论的基础上,根据等离子体色散效应分析了这种调制器的电光调制机理;根据有限元法分析了p+n结大注入时该调制器的电学性质,从而为实际研制成这种干涉型调制器打下了理论基础。
Abstract：A new method for analysing SOI (Silicon on Insulator) Sructure Mach-Zehnder interferometric modulator by using finite element method is put forward. On the basis of the theory of the single-mode SOI rib optical waveguides with large cross-section, the electro-optic modulating mechanism of the modulator is investigated by using the plasma dispersion effect, and the electrical characteristics of the device is analysed by using the finie element method at p+n junction large injected. So the method provides a basis of the theory for the device to be fabricated.
1997, Vol. 19 
