Abstract:The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array are introduced. The processing step at the edge of electron emission region is about 100 nm only and the width of self-aligned current channel of shallow As implantation is about 3 μm. Its I-V characteristics show a larger linear region and lower series resistance than that of the previous silicon avalanche electron emission devices. Some of the electron emission characteristics are also discussed in the paper.