FDTD Modeling of Active Devices Characterized by Measured S-Parameters
Chen Zhi-hui① Chu Qing-xin②
①(School of Electronic Engineering, Xidian University, Xi’an 710071, China) ②(College of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China)
Abstract:A novel FDTD modeling approach for active devices characterized by measured S-parameters is presented. This approach applies Vector Fitting (VF) technique and Piecewise Linear Recursive Convolution (PLRC) technique to complete modeling process, and does not need to know the equivalent circuits of active devices. It preserves the explicit nature of the conventional FDTD method, and obtains a general updated formula. Furthermore, the main data-processing procedure is directly handled over the frequency band of interest, which avoids the time-domain non-causal error in traditional techniques. It is useful to full-wave analyze hybrid microwave circuits including practical active devices.