High Performance CMOS Bandgap Reference Source Based on Negative Feedback Clamp Technique
Cao Han-mei①; Yang Yin-tang①; Cai Wei②; Lu Tie-jun②; Wang Zong-min②
①Microelectronics Institute, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071,China;②Beijing Microelectronics Insistute of Technology, Beijing 100076, China
Abstract：A novel CMOS bandgap reference is presented.A negative feedback clamp technique is used which eliminates the offset of Op-Amps and simplifies the design.A regulated cascode configuration is used to improve Power Supply Rejection Ratio(PSRR).It is implemented in SMIC standard 0.18μm CMOS process,the results from HSPICE simulation show that the temperature coefficient between-15～70℃ is 10.8ppm/℃,and the PSRR at 10Hz is 74.7dB,the output noise voltage is 148.7μV/sqrt(Hz).
曹寒梅; 杨银堂; 蔡 伟; 陆铁军; 王宗民. 基于负反馈箝位技术的高性能CMOS带隙基准源[J]. 电子与信息学报, 2008, 30(6): 1517-1520 .
Cao Han-mei①; Yang Yin-tang①; Cai Wei②; Lu Tie-jun②; Wang Zong-min②. High Performance CMOS Bandgap Reference Source Based on Negative Feedback Clamp Technique. , 2008, 30(6): 1517-1520 .
2008, Vol. 30 
